Extreme ultraviolet interference lithography at the Paul Scherrer Institut
نویسندگان
چکیده
منابع مشابه
Extreme ultraviolet interference lithography with incoherent light
In order to address the crucial problem of high-resolution low line-edge roughness resist for extreme ultraviolet (EUV) lithography, researchers require significant levels of access to high-resolution EUV exposure tools. The prohibitively high cost of such tools, even microfield tools, has greatly limited this availability and arguably hindered progress in the area of EUV resists. To address th...
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As critical dimensions shrink, line edge and width roughness (LER and LWR) become of increasing concern. Traditionally LER is viewed as a resist-limited effect; however, as critical dimensions shrink and LER requirements become proportionally more stringent, system-level effects begin to play an important role. Recent advanced EUV resist testing results have demonstrated lower bounds on achieva...
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Scanning illumination systems provide for a powerful and flexible means for controlling illumination coherence properties. Here we present a scanning Fourier synthesis illuminator that enables microfield extreme ultraviolet lithography to be performed on an intrinsically coherent synchrotron undulator beamline. The effectiveness of the system is demonstrated through a variety of print experimen...
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ژورنال
عنوان ژورنال: Journal of Micro/Nanolithography, MEMS, and MOEMS
سال: 2009
ISSN: 1932-5150
DOI: 10.1117/1.3116559